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Developed RT3DAAM for automotive use (AEC-Q101 compliance).
Realized the high density mounting by integrating 2 elements of a dual diode (MC2836) into a small package.
Started accepting orders. (Type name:RT3DAAM-T150 ：SC-88)

This product is a high-current, low on-resistance MOSFET housed in an HSOP8 package. Its excellent thermal dissipation characteristics enable a maximum power dissipation of 3W! Despite its compact size, it offers high power handling capability, making it ideal for a wide range of high-efficiency applications such as switching power supplies, motor drives, and battery protection circuits.
Pch, ID：-17A (high current), VDSS：-30V, Ron: 9.5mΩ (typical), Drive voltage -4V type, Package:HSOP8
Started accepting sample orders. (Type name:INJ0E22AG1)

This MOSFET features a low on-resistance design that enables high-current drive while minimizing switching losses.
Despite its compact SOP8 package, it achieves a power dissipation rating of 2.5W, making it ideal for high-efficiency applications such as DC-DC converters, motor drivers, and battery protection circuits.
Nch, ID：7.8A (high current), VDSS：60V, Ron: 18mΩ (typical), Drive voltage 4V type, Package:SOP8
Started accepting sample orders. (Type name:INK0810AK1)

A new MOSFET with a power dissipation of 1.5W that achieves high efficiency with low on-resistance is now available in a compact SC-74 Low-profile package.
It can be widely used for high-speed switching and LED drive.
Pch, ID：-5.1A (high current), VDSS：-20V, Ron: 35mΩ (typical), Drive voltage -2.5V type, Package: Low-profile SC-74(SC-95)
Started accepting sample orders. (Type name: INJ0503BC2)

A new MOSFET with a power dissipation of 1.5W that achieves high efficiency with low on-resistance is now available in a compact SC-74 Low-profile package.
It can be widely used for high-speed switching and LED drive.
Nch, ID：5.0A (high current), VDSS：60V, Ron: 30mΩ (typical), Drive voltage 4V type, Package:Low-profile SC-74(SC-95)
Started accepting sample orders. (Type name: INK0510AC2)

Best suited for using in inductance load drive of motors, solenoids and so on!
Nch MOSFET, VDSS: 50±12V, ID: 2A, Ron: 175mΩ (typical), Drive voltage 4V type, package: TO-92S
Started accepting sample orders. (Type name: INKA214AS1)

Best suited for using in inductance load drive of motors, solenoids and so on!
Nch MOSFET with built-in Zener diode, VDSS: 60V, ID: 2A, Drive voltage 4V type, package: SOT-89
Started mass production shipping. (Type name: INKE211BP1)

Developed high current, low ON Resistance MOSFET in a small package! It can be widely used for high-speed switching and LED drive.
Pch, ID：-2.9A (high current), VDSS：-30V, VGSS：±20V, Ron: 80mΩ (typical), Drive voltage -4V type, Package: SC-59
Started accepting sample orders. (Type name: INJ0212CC1)

Developed high current, low ON Resistance MOSFET in a small package! It can be widely used for high-speed switching and LED drive.
Pch, ID：-2.6A (high current), VDSS：-20V, VGSS：±10V, Ron: 100mΩ (typical), Drive voltage -2.5V type, Package: SC-59
Started accepting sample orders. (Type name: INJ0203CC1)

Developed high current, low ON Resistance MOSFET in a small package! It can be widely used for high-speed switching and LED drive.
Pch, ID：-3.1A (high current), VDSS：-30V, Ron: 59mΩ (typical), Drive voltage -2.5V type, Package: SC-59
Started accepting sample orders. (Type name: INJ0302BC1)

Developed high current, low ON Resistance MOSFET in a small package! It can be widely used for high-speed switching and LED drive.
Pch, ID：-4.6A (high current), VDSS：-20V, Ron: 32mΩ (typical), Drive voltage -2.5V type, Package: SC-59
Started accepting sample orders. (Type name: INJ0503BC1)

Developed high current, low ON Resistance MOSFET in a small package! It can be widely used for high-speed switching and LED drive.
Nch, ID：2A (high current), VDSS：60V, VGSS：±20V, Ron: 167mΩ (typical), Drive voltage 4V type, Package: SC-59
Started accepting sample orders. (Type name: INK0210CC1)

Developed high current, low ON Resistance MOSFET in a small package! It can be widely used for high-speed switching and LED drive.
Nch, ID：1.4A (high current), VDSS：100V, Ron: 311mΩ (typical), Drive voltage 4V type, Package: SC-59
Started accepting sample orders. (Type name: INK011AAC1)

Developed high current, low ON Resistance MOSFET in a small package! It can be widely used for high-speed switching and LED drive.
Pch, ID：-1.9A (high current), VDSS：-60V, Ron: 188mΩ (typical), Drive voltage -4V type, Package: SC-59
Started accepting sample orders. (Type name: INJ0210AC1)

Developed INKE111BC1 for automotive use (AEC-Q101 compliance).
Nch MOSFET with built-in Zener diode, VDSS: 40V, ID: 0.5A, Drive voltage 4V type, package: SC-59
Started accepting orders. (Type name: INKE111BC1)

Developed a MOSFET in which a Zener diode for preventing avalanche breakdown during a inductance load driving is built.
Nch, VDSS: 40V, ID: 0.5A, Drive voltage 4V type, package: SC-59
Started accepting sample orders. (Type name: INKE111BC1)

Developed high current, low ON Resistance MOSFET in a small package! It can be widely used for high-speed switching and LED drive.
Pch, ID：-2.6A (high current), VDSS：-20V, Ron: 130mΩ (typical), Drive voltage -2.5V type, Package: SOT-89
Started accepting sample orders. (Type name: INJ0203BP1)

Developed high current, low ON Resistance MOSFET in a small package! It can be widely used for high-speed switching and LED drive.
Nch, ID：3.2A (high current), VDSS：30V, Ron: 70mΩ (typical), Drive voltage 2.5V type, Package: SC-59
Started accepting sample orders. (Type name: INK0302FC1)

Developed INJ0011AM1 for automotive use (AEC-Q101 compliance).
ID：-0.1A, VDSS：-50V, Ron：4.8Ω (typical), Drive voltage -4V type, Package：SC-70
Started accepting orders. (Type name: INJ0011AM1-TH50)

Developed INK0010AM1 for automotive use (AEC-Q101 compliance).
ID：0.26A, VDSS: 60V, Ron: 3Ω (typical), Drive voltage 4V type, Package: SC-70
Started accepting orders. (Type name: INK0010AM1-TH50)

Developed high current, low ON Resistance MOSFET in a small package! It can be widely used for high-speed switching and LED drive.
Nch, ID：2.7A (high current), VDSS：60V, VGSS：±20V, Ron: 94mΩ (typical), Drive voltage 4V type, Package: SC-59
Started accepting sample orders. (Type name: INK0310AC1)

Developed INTB27VAC1 for automotive use (AEC-Q101 compliance).
Diode for ESD protection of 27V corresponding to IEC61000-4-2.
Started accepting orders. (Type name: INTB27VAC1-TH50：SC-59)

Developed high current, low ON Resistance MOSFET in a small package! It can be widely used for high-speed switching and LED drive.
Pch, ID：-2.5A (high current), VDSS： -60V, Ron: 110mΩ (typical), Drive voltage -4V type, Package: SC-59
Started accepting sample orders. (Type name: INJ0310AC1)

Developed RT3DKKM for automotive use (AEC-Q101 compliance).
Realized the high density mounting by integrating 2 elements of a dual diode (MC2838) into a small package.
Started accepting orders. (Type name: RT3DKKM-T150：SC-88)

Developed N-ch MOSFET capable of high current and low voltage drive in a small SMD package!
ID：0.68A, VDSS: 30V, Ron: 0.35Ω (typical), Drive voltage 2.5V type, Package: SC-70
Started mass production shipping. (Type name: INK0102AM1)

Developed N-ch MOSFET capable of high current and low voltage drive in a small SMD package!
ID：0.7A, VDSS: 20V, Ron: 0.33Ω (typical), 1.8V driving type, Package: SC-70
Started mass production shipping. (Type name: INK0103AM1)

Developed N-ch MOSFET capable of high current and low drive in a small SMD package!
ID=0.7A, VDSS: 20V, Ron: 0.33Ω (typical), 1.8V driving type, Package: SC-59
Started mass production shipping. (Type name: INK0103AC1)

Developed high current, low ON Resistance MOSFET in a small package! It can be widely used for high-speed switching and LED drive.
Nch, ID：6.2A (high current), VDSS： 20V, Ron: 18mΩ (typical), 1.8V driving type, Package: SC-59
Started accepting sample orders. (Type name: INK0602BC1)

Developed high current, low ON Resistance MOSFET in a small package! It can be widely used for high-speed switching and LED drive.
Pch, ID：-4.6A (high current), VDSS： -30V, Ron: 36mΩ (typical), -4V driving type, Package: SC-59
Started accepting sample orders. (Type name: INJ0512AC1)

Ultra-low drive MOSFET that can be powered even by dry cell battery!
Pch, VDSS: -20V, ID：-0.4A, Ron: 5.0Ω (typical：ID=-1mA, VGS=-1.2V), -1.2V driving type, Package: SC-70
Started mass production shipping . (Type name: INJ0043AM1)

Best suited for using in inductance load drive of motors, solenoids and so on!
Nch, VDSS: 50±12V, ID=2A, Ron: 200mΩ (typical), 4V driving type, Package: SOT-89
Started mass production shipping . (Type name: INKA214AP1)

Developed NPN Bipolar Transistor of TO92S package with collector current of 0.1A, voltage of 160V.
High voltage and low output capacitance, ideal for audio equipment such as discrete amplifiers with high supply voltage.
Started mass production shipping. (Type name: INC6006AS1)

Developed high current, low ON Resistance MOSFET in a small package! It can be widely used for high-speed switching and LED drive.
Nch, ID：6A (high current), VDSS： 30V, Ron: 22mΩ (typical), 4V driving type, Package: SC-59
Started accepting sample orders. (Type name: INK0612AC1)

Best suited for using in inductance load drive of motors, solenoids and so on!
It protects MOSFET from a counter-electromotive force at the time of inductance load driving with clamp diode between drain and gate.
Nch, ID：0.7A, VDSS：50V±12V, Ron: 1.1Ω (typical), 4V driving type, Package: SOT-89
Started mass production shipping. (Type name: INKA114AP1)

Best suited for using in inductance load drive of motors, solenoids and so on!
It protects MOSFET from a counter-electromotive force at the time of inductance load driving with clamp diode between drain and gate.
Nch, ID：0.55A, VDSS：50V±12V, Ron: 1.1Ω (typical), 4V driving type, Package: SC-59
Started mass production shipping. (Type name: INKA114AC1)

Best suited for high voltage switching!
Developed N-ch MOSFET of SOT-89 package with VDSS=500V, ID=500mA.
Started mass production shipping. (Type name: INK013EAP1)

Best suited for using in inductance load drive of motors, solenoids and so on!
It protects MOSFET from a counter-electromotive force at the time of inductance load driving with clamp diode between drain and gate.
Nch, ID：0.55A, VDSS：50V±12V, Ron: 1.1Ω (typical), 4V driving type, Package: SC-59
Started accepting sample orders. (Type name: INKA114AC1)

Best suited for using in inductance load drive of motors, solenoids and so on!
It protects MOSFET from a counter-electromotive force at the time of inductance load driving with clamp diode between drain and gate.
Nch, ID：0.7A, VDSS：50V±12V, Ron: 1.1Ω (typical), 4V driving type, Package: SOT-89
Started accepting sample orders. (Type name: INKA114AP1)

Developed adapter unit for Mitsubishi HV100 type HVIGBT module of 3300V/4500V, 450A~600A class.
Our unique TLAC (Total Line length Adjustment Circuit) connection method enables easy parallel connection of IGBT modules.
It is possible to be mounted directly on Mitsubishi HV100 type modules.
Started accepting sample orders. (Type name: VLB521-01R)

Developed high current, low ON Resistance MOSFET in a small package! It can be widely used for high-speed switching and LED drive.
Nch, ID：3.7A (high current), VDSS： 100V, Ron: 48mΩ (typical), 4V driving type, Package: SC-59
Started accepting sample orders. (Type name: INK040AAC1)

Developed adapter unit for thin DUAL type IGBT module of 1200V/1700V, 225A~800A class.
Our unique TLAC (Total Line length Adjustment Circuit) connection method enables easy parallel connection of IGBT modules. It is possible to be mounted directly on thin DUAL-type modules.
Started accepting sample orders. (Type name: VLB520-01R)

Developed high current, low ON Resistance MOSFET in a small package! It can be widely used for high-speed switching and LED drive.
Nch, ID：5.0A (high current), VDSS： 30V, Ron: 27mΩ (typical), 4V driving type, Package: SC-59
Started accepting sample orders. (Type name: INK0512CC1)

Developed high current, low ON Resistance MOSFET in a small package! It can be widely used for high-speed switching and LED drive.
Nch, ID：3.5A (high current), VDSS： 60V, Ron: 54mΩ (typical), 4V driving type, Package: SC-59
Started accepting sample orders. (Type name: INK0410AC1)

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Best suited for high voltage switching!
Developed N-ch MOSFET of SOT-89 package with VDSS=500V, ID=500mA.
Started accepting sample orders. (Type name: INK013EAP1)

Developed a pre-driver MFT for IGBT gates with a built-in UVLO and a power cut-off circuit!　Package : SC-74
Started accepting sample orders. (Type name: RT8H112C)

Developed high current, low ON Resistance MOSFET in a small package! It can be widely used for high-speed switching and LED drive.
Nch, ID：2.7A (high current), VDSS： 60V, Ron: 92mΩ (typical), 4V driving type, Package: SC-59
Started accepting sample orders. (Type name: INK0310CC1)

The gate drive unit for 1200V/600A, 1700V/300A class Mitsubishi 2nd generation SiC-MOSFET modules is under development.
Built-in short-circuit protection circuit for RTC circuit enables to drive new SiC-MOSFET modules safely.
We will start accepting sample requests in April 2022. (Type name: VLB519-01R)

Developed MFT that realized the leakage detection function in a small SMD package!
 ・0.5-wave 1-shot count method, latch output method
 ・Package : SC-74
Started accepting orders. Type name: RT8H064C

Best suited for high voltage switching!
Developed a product mounted high voltage 400V and 0.2A collector current class transistors on a TO-92S package.
Started accepting orders. Type name: INA6012AS1

Fast switching time and best suited for overvoltage protection of microcomputer ports!
Realized the high density mounting by integrating 2 elements of a dual diode (MC2838) into a small package.
Started accepting orders. (Type name: RT3DKKM: SC-88)

Best suited for high voltage switching!
Developed a product mounted with high voltage (PNP: -150V, NPN: 160V) and 0.1A collector current class transistors on a SC-59 package.
Started accepting orders. (Type name: INA6017AC1 / INC6017AC1)

Developed gate driver unit & adaptor unit mountable on 2in1 type IGBT module of 1200V/1700V, 1200A class.
It is easy to use due to the unit with built-in isolated gate power supply and short circuit protection function. Isolation strength of 4000Vrms, 1 minute, output gate peak current of 20A (max).
It is suitable for 1200V/1700V class industrial LV100 package of Mitsubishi IGBT modules.
Started accepting sample orders. (Type name: VLB514-01R / VLB515-01R)

Developed gate driver unit possible parallel drive of 1700V, 1200A class HVIGBT module. It is easy to use due to the unit with built-in isolated gate power supply and short circuit protection function.
Isolation strength of 6000Vrms, 1 minute, output gate peak current of 40A (max). It is suitable for 1700V class LV100 package of Mitsubishi HVIGBT modules.
Started accepting sample orders. (Type name: VLB516-01R)

The gate drive unit for 1200V/800A, 1700V/300A class Mitsubishi 2nd generation SiC-MOSFET modules is under development.
Built-in short-circuit protection circuit for RTC circuit enables to drive new SiC-MOSFET modules safely.
We will start accepting sample requests in October 2021. (Type name: VLB512-01R)

NPN transistor with a pull-up resistor (MFT Lite).
Best suited for using in a switch circuit or logic inversion circuit due to a built-in pull-up resistor (0.5kΩ) in addition to the base resistor and the base-emitter resistor! Maximum voltage of 50V, collector current of 50mA.
Started accepting sample orders. (Type name: RT8N001M)

Best suited for high voltage switching!
Developed a product mounted with high voltage (PNP: -150V, NPN: 160V) and 0.1A collector current class transistors on a SC59 package.
Started accepting sample orders. (Type name: INA6017AC1、 INC6017AC1)

Best suited for detecting input voltage of interface circuit! Automotive use (AEC-Q101 compliance).
2 elements of Nch-MOSFET with VDSS: 30V / ID: 200mA and Zener diode with Vz：8.2V are built in SC-88 package.
Started accepting orders. (Type name: RTE13K6M-T150)

Best suited for detecting input voltage of interface circuit! Meet specifications for automotive use (AEC-Q101 compliance).
2 elements of RT1N441 (R1 = 47kΩ, R2 = 47kΩ, NPN transistor) and Zener diode with Vz：3.6V are built in SC-88 package.
Started accepting sample orders. (Type name: RTE05N3M-T151)

Developed RT3N33M for automotive use (AEC-Q101 compliant).
It has two built-in RT1N441 (R1 = 47kΩ, R2 = 47kΩ, NPN transistor) and can be used in various circuits.
Started accepting orders. (Type name: RT3N33M-T150)

Developed a pre-driver MFT for IGBT gates with a built-in UVLO function! Package : SC-74.
Started accepting orders. (Type name: RT8H102C)

Best suited for high voltage switching!
Developed a product mounted high voltage 450V and 0.15A collector current class transistors on a SOT-89 package.
Started accepting orders. (Type name: INC6020AP1)

Developed a window comparator that determines if a signal is between two reference voltages. Best suited for a signal level detection, low voltage protection and overvoltage protection, etc. Package : SC-74.
Started accepting orders. (Type name: RT8H151C)

Developed products with Zener diode mounted in SC-59 package.
Started mass production shipping. (Type name: INTB3V6LAC1(Vz=3.6V)/ INTB5V6LAC1(Vz=5.6V)/ INTB8V2LAC1(Vz=8.2V)/ INTB16VLAC1(Vz=16V)/ INTB18VLAC1(Vz=18V)/ INTB27VLAC1(Vz=27V))

Developed a high voltage switching PNP transistor (SC-59 package, 400V/0.1A) compatible with AEC-Q101.
Started mass production shipping. (Compatible with AEC-Q101: INA6005BC1-TH50)

Developed adapter unit for 2-in-1 type general industrial IGBT module of 1700V, 800A~1200A class.
It is possible to realize parallel connection of IGBT modules easily by our original wiring technique. It is suitable for LV100 package of Mitsubishi general industrial IGBT modules.
Started accepting sample orders. (Type name: VLA595-02R)

Developed gate driver unit for IGBT module drive of large current type with 40A(max) output peak current.
It is easy to use due to built-in isolated gate power supply and short circuit protection circuit. It is possible to directly drive up to 4 parallel 1700V, 1200A class IGBT modules. Isolation strength of 4000Vrms, 1 minute.
Started accepting sample orders. (Type name: GAU240P-15405)

NPN transistor with a pull-up resistor (MFT Lite).
Best suited for using in a switch circuit or logic inversion circuit due to a built-in pull-up resistor in addition to the base resistor and the base-emitter resistor! Maximum voltage of 50V, collector current of 50mA.
Started accepting sample orders. (Type name: RT8N010M)

Developed hybrid IC for IGBT module drive of large current type with 40A(max) output peak current.
SIP structure contributes to reduce space on mother board. It is possible to directly drive up to 4 parallel 1700V, 1200A class IGBT modules. Isolation strength of 4000Vrms, 1 minute.
Started accepting sample orders. (Type name: VLB506-01R)

Best suited for using in a circuit of inductance load driving, with a Zener diode between drain and source!
Nch, VDSS: 100V, ID=1.8A, Ron: 200mΩ (typical), 4V driving type, Package: SOT-89
Started mass production shipping. (Type name: INK021ABP1)

Developed a product containing medium current Nch MOSFETs in ultra-small SMD package!
Maximum Drain voltage of 60V, drain current of 0.5A
Started mass production shipping. (Type name: INK0110AC1)

Developed an isolated DC/DC converter (input 17 to 25.5V, output 15V / 60mA x 4 outputs, isolated voltage 2500Vrms).
It has four output terminals that are insulated from each other, and has a isolated voltage of 2500 Vrms between input and output and between each output. This is an isolated DC/DC converter that is optimal as a control power supply for inverter drive.
Started accepting sample orders. (Type name: VLA143-24153)

Developed a MOSFET in which a Zener diode for preventing avalanche breakdown during a inductance load driving is built.
Nch, VDSS: 40V, ID: 1A, 4V driving type, package: SC-59
Started mass production shipping. (Type name: INKE211AC1)

Best suited for high voltage switching!
Developed MOSFET of SOT-89 package with VDSS=150V, ID=1.2A.
Started mass production shipping. (Type name: INK011BAP1)

Developed adapter unit for 2-in-1 type FullSiC module of 3300V, 750A class.
It is possible to realize parallel connection of FullSiC modules easily by our original wiring technique. It is suitable for FMF750DC-66A of Mitsubishi Electric.
Started accepting sample orders. (Type name: VLA595-04R)

Best suited for using in inductance load drive of motors, solenoids and so on!
Nch, VDSS: 50±12V, ID=1.7A, Ron: 200mΩ (typical), 5V driving type, Package: SOT-89
Started accepting sample orders. (Type name: INKA214AP1)

Developed gate driver unit possible parallel drive of 3300V, 750A class FullSiC module.
It is easy to use due to the unit with built-in isolated gate power supply and short circuit protection function.
Isolation strength of 6000Vrms, 1 minute, output gate peak current of 36A (max). It is suitable for 3.3kV class FullSiC module FMF750DC-66A of Mitsubishi Electric.
Started accepting sample orders. (Type name: VLB505-01R)

Best suited for high voltage switching!
Developed a product mounted high voltage 400V and 0.2A collector current class transistors on a TO-92S package.
Started accepting sample orders. (Type name: INA6012AS1)

Developed gate driver unit possible parallel drive of 3300V, 450A~600A class HVIGBT module.
It is easy to use due to the unit with built-in isolated gate power supply and short circuit protection function.
Isolation strength of 6000Vrms, 1 minute, output gate peak current of 24A (max). It is suitable for LV100 package of Mitsubishi HVIGBT modules.
Started accepting sample orders. (Type name: VLA557-03R)

Developed adapter unit for 2-in-1 type HVIGBT module of 3300V, 450A~600A class.
It is possible to realize parallel connection of IGBT modules easily by our original wiring technique. It is suitable for LV100 package of Mitsubishi HVIGBT modules.
Started accepting sample orders. (Type name: VLA595-01R)

Best suited for detecting input voltage of interface circuit!
2 elements of Nch-MOSFET with VDSS: 30V / ID: 200mA and Zener diode with Vz：8.2V are built in SC-88 package.
Started accepting sample orders. (Type name: RTE13K6M)

Best suited for using in a circuit of inductance load driving, with a Zener diode between drain and source!
Nch, VDSS: 100V, ID=1.8A, Ron: 200mΩ (typical), 4V driving type, Package: SOT-89
Started accepting sample orders. (Type name: INK021ABP1)

Developed gate driver unit with dual channels possible to drive 1700V,1800A class IGBT module.
It is easy to use by built-in isolated gate power supply and short circuit protection circuit. Isolation strength of 4000Vrms, 1 minute, Output gate peak current of 20A(max) .
Started mass production shipping. (Type name: GAU220P-15402)

IC SOP14 package with functions of leakage detection and abnormal voltage detection for earth leakage breaker.
・Capable of switching leakage detection mode: 1.5-wave 3-shot count method ⇔ 1-wave 2-shot count method
・Built-in abnormal voltage detection (neutral conductor open phase protection) function (with a function stop control).
・High input sensitivity: 7.5mV (DC)
・Intermittent output (thyristor drive output)
Started mass production shipping. (Type name: RT8H044K)

Developed gate driver unit directly mountable on 1200V～1700V class IGBT module of Econo DUAL type.
The built-in collector clamp circuit, which prevents the surge voltage breakdown during IGBT turn-off, is easy to use. Isolation strength of 4000Vrms, 1 minute, output gate peak current of 10A (max).
Started mass production shipping. (Type name: VLA598-01R)

Best suited for high voltage switching!
Developed SC88 package product in which 2 elements of transistors with high voltage 160V and 0.1A collector current class are built.
Started mass production shipping. (Type name: RT3C88M)

Best suited for high voltage switching!
Developed a product mounted with high voltage (PNP: -150V, NPN: 160V) and 0.1A collector current class transistors on a SC70 package.
Started mass production shipping. (Type name: INA6017AM1 , INC6017AM1)

Developed low height type gate driver with 2 channels possible to drive 1700V class middle power IGBT modules.
It is opto-coupler-less and unnecessary outer opt-couplers for error signal feedback by using digital isolator high isolation strength type. Isolation strength of 4000Vrms, 1 minute, Output gate peak current of 10A (max).
Started accepting sample orders. (Type name: VLA597-01R)

Developed gate driver unit directly mountable on 1700V class IGBT module of Econo DUAL type.
The built-in collector clamp circuit, which prevents the surge voltage breakdown during IGBT turn-off, is easy to use. Isolation strength of 4000Vrms, 1 minute, output gate peak current of 10A (max).
Started accepting sample orders. (Type name: VLA598-11R)

Expansion of a lineup of diode for ESD protection of SC-59 package corresponding to IEC61000-4-2!
In addition to existing 18V product, newly 4 types of 3.6V, 5.6V, 8.2V and 27V products have been introduced.
Started mass production shipping. (Type name: INTB3V6AC1(3.6V)／INTB5V6AC1(5.6V)／INTB8V2AC1(8.2V)／INTB27VAC1(27V)）

Developed directly mountable on 1700V class IGBT module of Prime PACK type.
The built-in collector clamp circuit, which prevents the surge voltage breakdown during IGBT turn-off, is easy to use. Isolation strength of 4000Vrms, 1 minute, output gate peak current of 20A (max).
Started accepting sample orders. (Type name: VLA593-11R)

Best suited for power supplies and relay drives!
Developed NPN Bipolar Transistor of SOT89 package with voltage of 100V, collector current of 1A.
Started mass production shipping. (Type name: INC6001AP1） This product has a model which corresponds to AEC-Q101.

Developed adapter unit to support the use of 1700V, 2400A class HVIGBT module.
The built-in collector clamp circuit which prevents the surge voltage breakdown contributes to reliability improvement.
In addition, wiring connection is easy for connector use.
Started accepting sample orders. (Type name: VLA588-01R）

Developed isolated DC/DC converter (Input: DC18～26V, Output: 24V/250mA, Isolation voltage: 3000Vrms).
The small size SIP structure contributes to miniaturization of equipment.
Best suited for the power supply for control circuit that requires SELV isolated from the main circuit such as power conditioners since it has isolation strength of 3000Vrms.
Started accepting sample orders. (Type name: VLA137-24246）

Best suited for high-side switch circuit!
Developed SOT-89 package product mounted a Pch MOSFET of VDSS=-100V and ID=-1.2A.
Started accepting sample orders. (Type name: INJ021AAP1）

Best suited for input voltage detection and so on of the interface circuit!
Developed a product mounting a resistor built-in transistor and a Zener diode in the SC-88 package.
Started accepting sample orders. (Type name: RTE05N3M）

Developed gate driver unit possible to drive 1700V, 2400A class HVIGBT module.
It is easy to use due to built-in isolated gate power supply and short circuit protection function.
Isolation strength of 4000Vrms, 1 minute, output gate peak current of 24A (max).
Started accepting sample orders. (Type name: VLA557-11R）

Best suited for motor drivers!
Developed SC59 package product with a resistor mounted transistor of 1A class collector current in which a Zener diode is built in between collector and base.
Started accepting sample orders. (Type name: RTGN14BAC1）

Good for a pairing of transistors and best suited for differential amplification!
Developed SC88 package product in which 2 elements of bipolar transistors with 0.1A collector current and 150V withstand voltage class are built in.
Started mass production shipping. (Type name: RT3A66M,RT3C66M）

Developed low height type gate driver with 2 channels possible to drive 1700V class high power IGBT modules.
It is opto-coupler less and unnecessary outer opt-couplers for error signal feedback by using digital isolator high isolation strength type.
Isolation strength of 4000Vrms, 1 minute, Output gate peak current of 20A(max)
Started accepting sample orders. (Type name: VLA591-01R)

Best suited for using in inductance load drive of motors, solenoids and so on!
It protects MOSFET from a counter electromotive force at the time of inductance load driving by clamp diode between drain and gate.
Started accepting sample orders. (Type name: INKA114AS1/VDSS=50±12V, ID=0.5A: TO-92S）

Developed adapter unit for 3300V, 1500A class HVIGBT module.
Built-in collector clamp circuit which prevents the surge voltage breakdown contributes to reliability improvement.
In addition, wiring connection is easy for connector use.
Started accepting sample orders. Type name: VLA587-01R

Developed PNP Bipolar Transistor of TO92S package with collector current of 0.1A, voltage of 150V.
Started mass production shipping. (Type name: INA6006AS1）

Developed gate driver unit possible to drive 3300V, 1500A class HVIGBT module.
It is easy to use due to a module built-in isolated gate power supply and short circuit protection function.
Isolation strength of 6000Vrms, 1 minute, output gate peak current of 27A (max).
Started accepting sample orders. (Type name: VLA557-01R）

Best suited for power supplies and relay drives!
Developed PNP Bipolar Transistor of SOT89 package with voltage of 100V, collector current of 1A.
Started mass production shipping. (Type name: INA6001AP1）

Developed a large current transistor, best suited for motor driver!
Bipolar PNP transistor with 3A class collector current is mounted on SC-59 package.
Started accepting sample orders. (Type name: INA5002AC1）

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Best suited for ESD protection of external interface circuits for amusement equipment!
Developed ESD protection diode of IEC61000-4-2 Air Discharge ±30kV and Contact Discharge ±30kV with lead type mounting.
Started accepting sample orders. (Type name: INT06V4BS1/VBR=6.4～7.2V：TO-92S）

Developed gate driver unit with dual channels possible to drive 1200V, 450A class IGBT module. It is easy to use due to a module mountable unit structure and built-in isolated gate power supply. Isolation strength of 2500Vrms, 1 minute, output gate peak current of 5A (max).
Started accepting sample orders. (Type name: VLA592-01R）

Developed isolated DC-DC converter (Input: 9～18V, Output: 3.3V/480mA, Isolation voltage: 2500Vrms).
Because of a small size and SIP structure, it allows more space on mother board and is suitable as a power supply of a control circuit requires 3.3V for the 400V series system and equipment.
Started accepting sample orders. (Type name: VLA106-15031）

Developed a MOSFET best suited as a switching device for a high-side switching circuit!
Pch, VDSS: -30V, ID: -2.5A, -4V-drive type, Package: SOT-89.
Started accepting sample orders. (Type name: INJ0212AP1）

Developed gate driver unit with dual channels possible to drive 1200V,800A class Full-SiC module.
It is easy to use by module mountable unit structure and built-in short circuit protection circuit.
Isolation strength of 2500Vrms, 1 minute, Output gate peak current of 7A(max) .
Started accepting sample orders.Type name: VLA586-01R

Realized the high density mounting by integrating 2 elements of a dual diode (MC2850), which are currently being mass production shipping for regular switching, into a small package.
Started mass production shipping. (Type name: RT3DSSM：SC-88）

Developed IGBT driver with 2 channels possible to drive 1200V class middle power IGBT modules.
It is easy to design by built-in isolated power supply for gate driving. (Input voltage is 24V)
Isolation strength of 2500Vrms, 1 minute, Output gate peak current of 8A(max)
Started accepting sample orders.Type name: VLA567-02R