Isahaya Electronics Corporation

Small technology makes a big impact.
We dream of realizing such potential and keep striving for it.

Discrete Devices

To meet a variety of customer needs, we dedicate ourselves to developing discrete devices including High-voltage, High-current transistors, MOS-FETs, and Analog ICs.

Power Modules

We bring together our expertise in circuit technology and packaging technology to design and develop semiconductor devices including Custom power units, Gate drivers, and DC/DC converters.

We operate globally.

Our network for production, sales, and distribution allows us to communicate closely with each other so that we can speedily meet the demands of our customers worldwide.

NEWS & TOPICS

2021.09.06

What's New NEW

Developed gate driver unit possible parallel drive of 1700V, 1200A class HVIGBT module. It is easy to use due to the unit with built-in isolated gate power supply and short circuit protection function.
Isolation strength of 6000Vrms, 1 minute, output gate peak current of 40A (max). It is suitable for 1700V class LV100 package of Mitsubishi HVIGBT modules.
Started accepting sample orders. (Type name: VLB516-01R)

2021.08.02

What's New

The gate drive unit for 1200V/800A, 1700V/300A class Mitsubishi 2nd generation SiC-MOSFET modules is under development.
Built-in short-circuit protection circuit for RTC circuit enables to drive new SiC-MOSFET modules safely.
We will start accepting sample requests in October 2021. (Type name: VLB512-01R)

2021.08.02

What's New

NPN transistor with a pull-up resistor (MFT Lite).
Best suited for using in a switch circuit or logic inversion circuit due to a built-in pull-up resistor (0.5kΩ) in addition to the base resistor and the base-emitter resistor! Maximum voltage of 50V, collector current of 50mA.
Started accepting sample orders. (Type name: RT8N001M)

View List