Developed isolated DC-DC converter (Input: 9～18V, Output: 3.3V/480mA, Isolation voltage: 2500Vrms).
Because of a small size and SIP structure, it allows more space on mother board and is suitable as a power supply of a control circuit
requires 3.3V for the 400V series system and equipment.
Started accepting sample orders. (Type name: VLA106-15031）
Developed a MOSFET best suited as a switching device for a high-side switching circuit!
Pch, VDSS: -30V, ID: -2.5A, -4V-drive type, Package: SOT-89.
Started accepting sample orders. (Type name: INJ0212AP1）
Developed gate driver unit with dual channels possible to drive 1200V,800A class Full-SiC module.
It is easy to use by module mountable unit structure and built-in short circuit protection circuit.
Isolation strength of 2500Vrms, 1 minute, Output gate peak current of 7A(max) .
Started accepting sample orders.Type name: VLA586-01R
Realized the high density mounting by integrating 2 elements of a dual diode (MC2850), which are currently being mass production shipping for regular switching, into a small package.
Started mass production shipping. (Type name: RT3DSSM：SC-88）
Developed IGBT driver with 2 channels possible to drive 1200V class middle power IGBT modules.
It is easy to design by built-in isolated power supply for gate driving. (Input voltage is 24V)
Isolation strength of 2500Vrms, 1 minute, Output gate peak current of 8A(max)
Started accepting sample orders.Type name: VLA567-02R